| “Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone” Microelectronics Journal, Volume 147, (2024), 106158, https://doi.org/10.1016/j.mejo.2024.106158. |
| “Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications”., Microelectronics Journal, Volume 138, (2023), 105866. https://doi.org/10.1016/j.mejo.2023.105866. |
| Precoding-NCT Technique for PAPR Reduction in Next Generation Wireless Networks”, EAI Endorsed Transactions on Industrial Networks and Intelligent Systems, (2022). |
| Theoretical Study of TiO2 based UV-VIS Spectrometer Gratings for Assessment of Skin Lesions in Localized Scleroderma”, Optik, 170033(2022) https://doi.org/10.1016/j.ijleo.2022.170033. (Q2 – Journal) |
| InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research”, Optical and Quantum Electronics, 54(9), 1-15 (2022) https://doi.org/10.1007/s11082-022-04002-1. (Q2 – Journal) |
| Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes” Optical and Quantum Electronics volume 54, Article number: 168 (2022). https://doi.org/10.1007/s11082-022-03552-8 (Q2 – Journal) |
| “Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS-HEMT using Cubic Spline Interpolation technique” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (2021). https://doi.org/10.1002/jnm.2936 (Q3 – Journal) |
| "Numerical investigation of traps and optical response in III-V nitride quantum LED”, Optical and Quantum Electronics 52(12), (2020). 10.1007/s11082-020-02633-w (Q2 – Journal) |
| Optical Grating Techniques for MEMS based Spectrometer -A Review," in IEEE Sensors Journal, (2020) doi: 10.1109/JSEN.2020.3041196. (Q1 – Journal) |
| “A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application”, Silicon, (2020) https://doi.org/10.1007/s12633-020-00647-3 (Impact Factor: 1.499). (Q2 – Journal) |
| Impact of AlInN back-barrier over AlGaN/GaN MOS-HEMT with HfO2 dielectric using Cubic Spline Interpolation Technique " IEEE Trans. Electron Devices (2020)67(9) 3558-3563., DOI: 10.1109/TED.2020.3010710 (Impact Factor: 2.913). (Q1 – Journal) |
| A Review of Blue Light Emitting Diodes for Future Solid State Lighting and Visible Light Communication Applications, Superlattices and Microstructures, DOI: https://doi.org/10.1016/j.spmi.2019.106294, (2019) (Impact Factor: 2.384). (Q2 – Journal) |
| Improved RF and DC Performance in AlGaN/GaN HEMT by P-type doping in GaN Buffer for Millimetre-Wave Applications”, Int. J. Electron. Commun. (AEÜ), (2019) (Impact Factor: 2.115). (Q2 – Journal) |
| “Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications”, Semiconductors volume 52, pages1991–1997 (2018), https://doi.org/10.1134/S1063782618160029. (Q3 – Journal) |
| “Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20As Channel Based DG-HEMTs for Future Submillimetre wave and THz Applications”, IETE Journal of Research, https://doi.org/10.1080/03772063.2018.1553641 (2018) (Impact Factor: 0.829). (Q4 – Journal) |
| “InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review”, Int. J. Electron. Commun. (AEÜ), 94 (2018) 199–214 (Impact Factor: 2.115). (Q2 – Journal) |
| “Analysis of High Efficiency InGaN MQW LEDs Using InGaN Step-Graded Barriers”, J. Nanoelectron. Optoelectron. 13, 939–943 (2018), (Impact Factor: 0.497). (Q4 – Journal) |
| “Nanoscale High-K Dielectrics For Junctionless Nanowire Transistor For Drain Current Analysis” Journal of Electronic Materials, (Springer), doi.org/10.1007/s11664-018-6075-2, (2018). (Impact Factor: 1.579) (Q2 – Journal) |
| “Investigation of Efficiency Enhancement in InGaN MQW LED with Compositionally Step Graded GaN/InAlN/GaN Multi-Layer Barrier” Superlattices and Microstructures, (Elsevier)., 116 (2018), 71-78. (Impact Factor: 2.117). (Q2 – Journal) |
| “Investigation of DC-RF and breakdown behaviour in Lg = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications”, AEUE - International Journal of Electronics and Communications, 2017. (Impact Factor: 1.147). (Q2 – Journal) |
| “Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application”, Superlattices and Microstructures, (Elsevier), 113 (2018),810-820. (Impact Factor: 2.117). (Q2 – Journal) |
| “Investigation of Breakdown Performance in Lg = 20 nm Novel Asymmetric InP HEMTs for Future High-Speed High-Power Applications”, J. Comp. Electronics, (Springer), (2017), https://doi.org/10.1007/s10825-017-1086-4 (Impact Factor – 1.526) (Q3 – Journal) |
| “Analysis of nanometer-scale InGaAs/ InAs/ InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications”, Int. J. Electron. Commun. (AEÜ), (Elsevier), 79 (2017), 151–157. (Impact Factor: 0.786). (Q2 – Journal) |
| “Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor”, Superlattices and Microstructures (Elsevier), 104, (2017), 470–476. (Impact Factor: 2.117). (Q2 – Journal) |
| “A New Drain Current Model for Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance” IEEE Trans. Electron Devices, 63(9), (2016), 3782-3789. (Impact Factor – 2.207). (Q1 – Journal) |
| Implementation of nanoscale circuits using dual metal gate engineered Nanowire MOSFET with high-k dielectrics for low power applications” Physica E (Elsevier) 83 (2016) 95–100. (Impact Factor: 1.904). (Q2 – Journal) |
| “The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs” Microelectronics Journal (Elsevier) 46 (2015) 1387–1391. (Impact Factor: 0.876). (Q3 – Journal) |
| “Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications” Superlattices and Microstructures (Elsevier) 78 (2015) 210–223. (Impact Factor: 2.117). (Q2 – Journal) |
| “Temperature dependant efficiency droop analysis of InGaN MQW Light Emitting Diode with modified ABC Model”, J. Comp. Electronics, (Springer) 15, 1511–1520 (2016). (Impact Factor – 1.104) (Q3 – Journal) |
| “A Modified ABC Model in InGaN MQW LED Using Compositionally Step Graded Alternating Barrier for Efficiency Improvement”, Superlattices and Microstructures (Elsevier) 96, (2016), pp. 155-163. (Impact factor – 2.117). (Q2 – Journal) |
| “Efficiency Enhancement of InGaN MQW LED Using Compositionally Step Graded InGaN Barrier on SiC Substrate” IEEE J. Display Technology, 12(10), (2016), pp 1117-1121. (Impact Factor – 1.925). (Q1 – Journal) |
| Enhancement Mode GaN Based HEMT Using Polarization Engineering Technique” proceedings of IEEE International Conference on Innovations in Information Embedded and Communication Systems ICIIECS’14, Karpagam College of Engineering, Coimbatore, March 2014, Vol 2, pp 208-211. |
| “Green InGaN/GaN LEDs with n-GaN Interlayer for efficiency droop improvement” Proceeding of IEEE sponsored 3rd International Conference on Devices, Circuits and Systems (ICDCS’16), Karunya University, Coimbatore, pp-216-219, 3 March-2016. |
| “Design and Simulation of Schottky-Source/Drain GaN/AlGaN HEMTs for Breakdown Voltage Improvemnt” proceedings of IEEE International Conference on Electronics and Communication System ICECS’14, Karpagam College of Engineering, Coimbatore, February 2014 pp 187-189. |
| “Modelling of HEMT for high power switching application using polarization engineering technique” proceedings of IEEE International Conference on Electronics and Communication System ICECS’14, Karpagam College of Engineering, Coimbatore, February 2014 pp 149-152. |
| “Effect of quantum well thickness and molar concentration for obtaining different wavelength using AlGaAs/GaAs single quantum well LASER” proceedings of IEEE International Conference on Electronics and Communication ICECS’15, Karpagam College of Engineering, Coimbatore, Tamil Nadu Vol-3, (2015) pp:1738-1741. |
| “Impact of Gate Length on the Performance of a Junctionless Dual Metal Transistor with High-k dielectrics”, Proceeding of IEEE sponsored 3rd International Conference on Devices, Circuits and Systems (ICDCS’16), Karunya University, Coimbatore, pp-291-294, 3 March-2016. |
| “DC Performance analysis of AlGaN/GaN HEMT for future High power applications”, 4th International Conference on Devices, Circuits and Systems (ICDCS), (2018). |
| “Object detection and Counting using Unsupervised Method”, Third International Conference on Intelligent Computing and Control Syste1ns (ICICCS-2019), Vaigai College of Engineering, May 15-17, 2019 at Madurai, India. |
| “Luminous power improvement in InGaN V-Shaped Quantum Well LED using CSG on SiC Substrate”, IOP Conf. Series: Materials Science and Engineering 906 (2020) 012011 doi:10.1088/1757-899X/906/1/012011. |
| “CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics”, 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA), Coimbatore, India, (2020). DOI: 10.1109/ICECA49313.2020.9297448, |
| Novel PAPR Reduction in UFMC system for 5G Wireless Networks Using Precoding Algorithm, 2022 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET), 84-88 , IEEE (2022). DOI: 10.1109/WiSPNET54241.2022.9767123. |
| A Hybrid Feature Extraction Method Using SeaLion Optimization for Meningioma Detection from MRI Brain Image. In: , et al. Innovations in Bio-Inspired Computing and Applications. IBICA 2021. Lecture Notes in Networks and Systems, vol 419. Springer, Cham.(2022) https://doi.org/10.1007/978-3-030-96299-9_4 |
| “Investigation on Impact of GaAs and GaN Blazed Grating for High Performance UV-VIS Spectrometer” 3rd International Conference on Electronics and Sustainable Communication Systems (ICESC), August 2022. |
